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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note
FEATURES
* Super low on-state resistance: RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A) * Low Ciss: Ciss = 5900 pF TYP. * Built-in gate protection diode
2SK3511-ZJ 2SK3511-Z
Note TO-220SMD package is produced only in Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
75 20 83 260 100 1.5 150 -55 to +150 52 250
V V A A W W C C A mJ (TO-262)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 35 V, RG = 25 , VGS = 20 0 V (TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15617EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan
(c)
2001
2SK3511
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 60 V VGS = 10 V ID = 83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = 75 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 42 A VGS = 10 V, ID = 42 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 38 V, ID = 42 A VGS = 10 V RG = 0 2.0 21 3.0 45 9.5 5900 810 400 30 21 72 12 100 24 35 1.1 70 200 12.5 MIN. TYP. MAX. 10 10 4.0 UNIT
A A
V S m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D15617EJ1V0DS
2SK3511
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
PT - Total Power Dissipation - W
TC - Case Temperature - C
1000
ID(DC) ID(pulse)
=1 0 10 s 0 s 1m s
10 m s
ID - Drain Current - A
100
ited Lim 0 V n) 1 S(o RD GS = at V
PW
DC
10
Power Dissipation Limited
1 TC = 25C Single Pulse 10 1 VDS - Drain to Source Voltage - V 100
0.1 0.1
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - C/W
10
Rth(ch-A) = 83.3C/W
1
Rth(ch-C) = 1.25C/W
0.1
0.01 10
Single Pulse
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15617EJ1V0DS
3
2SK3511
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
300 Pulsed 250 VGS = 10 V
ID - Drain Current - A
1000 VDS = 10 V 100
ID - Drain Current - A
200 150 100 50 0 0 1 2 3 4 5 6 7 8
10 TA = 150C 75C 25C -55C 1 2 3 4 5 6 7
1
0.1
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
4.0
VGS(off) - Gate Cut-off Voltage - V
100
| yfs | - Forward Transfer Admittance - S
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 175 VDS = 10 V ID = 1 mA
VDS = 10 V Pulsed
10
1 TA = 150C 75C 25C -55C
0.1
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
Pulsed
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
20 18 16 14 12 10 8 6 4 2 0 0.1 1 10 100 1000 VGS = 10 V
20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
Pulsed
ID = 42 A
ID - Drain Current - A
4
Data Sheet D15617EJ1V0DS
2SK3511
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
25 Pulsed
Ciss, Coss, Crss - Capacitance - pF
10000
Ciss
20
1000
15
Coss Crss
10
100
5 VGS = 10 V ID = 42 A 0 -100 -50 0 50 100 150 200
VGS = 0 V f = 1 MHz
10 0.1 1 10 100
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000 tf
td(on), tr, td(off), tf - Switching Time - ns
100 80 60
100
td(off) td(on) tr
6 VGS 4 VDS ID = 83 A 2 0 120
40 20 0 0 20 40 60 80 100
10 VDD = 38 V VGS = 10 V RG = 0 1 10 100
1 0.1
ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs. DRAIN CURRENT
Pulsed
100
100
10
VGS = 10 V
1
0V
0.1
trr - Reverse Recovery Time - ns
ISD - Diode Forward Current - A
0.01
VGS = 0 V di/dt = 100 A/ s 10 0.1 1 10 100
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VSD - Source to Drain Voltage - V
IF - Drain Current - A
Data Sheet D15617EJ1V0DS
5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
VDD = 60 V 38 V 15 V
10 8
2SK3511
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
1000
160 140
IAS - Single Avalanche Current - A
Energy Derating Factor - %
120 100 80 60 40 20 0 25
VDD = 35 V RG = 25 VGS = 20 0 V IAS 52 A
100
IAS = 52 A EAS = 250 mJ
10 VDD = 35 V RG = 25 VGS = 20 0 V 1 0.001 0.01 0.1 1 10
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15617EJ1V0DS
2SK3511
PACKAGE DRAWINGS (Unit: mm)
1) TO-220 (MP-25)
3.00.3 10.6 MAX. 10.0 TYP. 5.9 MIN. 15.5 MAX. 4.8 MAX.
2) TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
4.8 MAX. 1.30.2
1.30.2
10 TYP.
4 1
2 3
4 123 6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.3 2.54 TYP.
0.50.2
2.54 TYP.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
3) TO-263 (MP-25ZJ)
10 TYP. 4 4.8 MAX. 1.30.2
4) TO-220SMD (MP-25Z)
10 TYP. 4
Note
4.8 MAX. 1.30.2
1.00.5
8.50.2
1.00.5
1 1.40.2 0.70.2 2.54 TYP.
2
3
1
TY P.
T . YP
2
3
1.10.4
5.70.4
3.00.5
8.50.2
P. TY P. 5R TY 0. R 0.8
1.40.2 0.50.2 0.750.3 2.54 TYP.
R 0.5
2.54 TYP.
0.8
R
2.54 TYP.
0.50.2
2.80.2
Note This Package is only produced in Japan.
EQUIVALENT CIRCUIT
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate
Body Diode
Gate Protection Diode
Source
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D15617EJ1V0DS
7
2SK3511
* The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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